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AUIRF9540N

International Rectifier
Part Number AUIRF9540N
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 29, 2014
Detailed Description AUTOMOTIVE GRADE PD - 97626 Features l l l l l l l l AUIRF9540N D Advanced Planar Technology Dynamic dV/dT Rating 17...
Datasheet PDF File AUIRF9540N PDF File

AUIRF9540N
AUIRF9540N

Overview
AUTOMOTIVE GRADE PD - 97626 Features l l l l l l l l AUIRF9540N D Advanced Planar Technology Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* V(BR)DSS RDS(on) max.
ID D -100V 0.
117Ω -23A G S Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
G D TO-220AB AUIRF9540N S G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current Max.
-23 -16 -76 140 0.
91 ± 20 430 -11 14 -5.
0 -55 to + 175 300 10 lbf in (1.
1N m) Units A W W/°C V mJ A mJ V/ns °C c PD @TC = 25°C Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS EAS IAR EAR dv/dt TJ TSTG Avalanche Current Single Pulse Avalanche Energy (Thermally Limited) c d Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and c e Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6...


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