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RQJ0202VGDQA

Renesas
Part Number RQJ0202VGDQA
Manufacturer Renesas
Description Silicon P Channel MOS FET Power Switching
Published Mar 30, 2014
Detailed Description Preliminary Datasheet RQJ0202VGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 83 ...
Datasheet PDF File RQJ0202VGDQA PDF File

RQJ0202VGDQA
RQJ0202VGDQA

Overview
Preliminary Datasheet RQJ0202VGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 83 mΩ typ (VGS = –4.
5 V, ID = –1.
4 A) • Low drive current • High speed switching • 2.
5 V gate drive R07DS0291EJ0500 Rev.
5.
00 Jan 10, 2014 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1 2 G 1.
Source 2.
Gate 3.
Drain S 1 Note: Marking is “VG”.
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings –20 +8 / –12 –2...


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