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IRG7PH28UD1PBF

Part Number	IRG7PH28UD1PBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Mar 31, 2014
Detailed Description	IRG7PH28UD1PbF IRG7PH28UD1MPbF C VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULT...
Datasheet	IRG7PH28UD1PBF PDF File

Overview

IRG7PH28UD1PbF IRG7PH28UD1MPbF C VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  Ultra-low VF diode  1300Vpk repetitive transient capacity  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient  Tight parameter distribution  Lead-free package Benefits  Device optimized for induction heating and soft switching applications  High efficiency due to low VCE(ON), low switching losses and ultra-low VF  Rugged transient performance for increased reliability  E...

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IRG7PH28UD1PBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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