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IRG7PH42UD1MPBF

International Rectifier
Part Number IRG7PH42UD1MPBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Mar 31, 2014
Detailed Description IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLI...
Datasheet PDF File IRG7PH42UD1MPBF PDF File

IRG7PH42UD1MPBF
IRG7PH42UD1MPBF


Overview
IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package C VCES = 1200V IC = 45A, TC = 100°C G E TJ(max) = 150°C VCE(on) typ.
= 1.
7V @IC= 30A n-channel G Benefits • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF • Rugged transient performance f...



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