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IRG7PH50U-EP

Part Number	IRG7PH50U-EP
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Mar 31, 2014
Detailed Description	PD - 97549 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching...
Datasheet	IRG7PH50U-EP PDF File

Overview

PD - 97549 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free C IRG7PH50UPbF IRG7PH50U-EP VCES = 1200V IC = 90A, TC = 100°C G E TJ(max) =175°C n-channel VCE(on) typ.
= 1.
7V Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation C C GC E Applications • ...

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IRG7PH50U-EP INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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