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IRG7PH50K10DPBF

International Rectifier
Part Number IRG7PH50K10DPBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Mar 31, 2014
Detailed Description   IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V I...
Datasheet PDF File IRG7PH50K10DPBF PDF File

IRG7PH50K10DPBF
IRG7PH50K10DPBF

Overview
  IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 50A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ.
= 1.
9V @ IC = 35A G E   C G G   Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding n-channel G Gate C G IRG7PH50K10DPbF  C Collector E C G E I  RG7PH50K10D‐EPbF  E Emitter Features Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH50K10DPBF IRG7PH50K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°...


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