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IRGP4078D-EPBF

Part Number	IRGP4078D-EPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Mar 31, 2014
Detailed Description	IRGP4078DPbF IRGP4078D-EP C VCES = 600V INOMINAL = 50A G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DI...
Datasheet	IRGP4078D-EPBF PDF File

Overview

IRGP4078DPbF IRGP4078D-EP C VCES = 600V INOMINAL = 50A G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Ultra-low VF Hyperfast Diode • Tight parameter distribution Benefits • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(ON), Low Switching Losses and Ultra-low VF • Rugged transient Performance for increased reliability • Excellent Curr...

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IRGP4078D-EPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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