DatasheetsPDF.com

IRGR3B60KD2


Part Number IRGR3B60KD2
Manufacturer International Rectifier
Title INSULATED GATE BIPOLAR TRANSISTOR
Description PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Te...
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 4.2A, TC=100°C G E tsc 10µs, TJ=150°C Benefits
• Benchmark Effici...

File Size 282.31KB
Datasheet IRGR3B60KD2 PDF File








Similar Ai Datasheet

IRGR3B60KD2PBF : PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. C G E n-channel • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. VCES = 600V IC = 4.2A, TC=100°C tsc 10µs, TJ=150°C VCE(on) typ. = 1.9V Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 10.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)