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DRA5113Z0L

Panasonic Semiconductor
Part Number DRA5113Z0L
Manufacturer Panasonic Semiconductor
Description Silicon PNP epitaxial planar type
Published Mar 31, 2014
Detailed Description Doc No. TT4-EA-11569 Revision. 3 Product Standards Transistors with Built-in Resistor DRA5113Z0L DRA5113Z0L Silicon P...
Datasheet PDF File DRA5113Z0L PDF File

DRA5113Z0L
DRA5113Z0L

Overview
Doc No.
TT4-EA-11569 Revision.
3 Product Standards Transistors with Built-in Resistor DRA5113Z0L DRA5113Z0L Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5113Z DRA2113Z in SMini3 type package  Features  Low collector-emitter saturation voltage Vce(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 Unit: mm 2.
0 0.
3 3 0.
13 1.
25 2.
1 0.
9 (0.
65) (0.
65) 1.
3  Marking Symbol: L1  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1.
Base 2.
Emitter 3.
Collector Panasonic JEITA Code SMini3-F2-B SC-85 ―  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Operating ambient temperature Storage temperature VCBO VCEO IC PT Tj Topr Tstg Rating -50 -50 -100 150 150 -40 to +85 -55 to +150 Unit V V mA mW °C °C °C Internal Connection B R1 R2 C E Resistance value  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open) VCEO Collector-base cutoff current (Emitter open) ICBO Collector-emitter cutoff current (Base open) ICEO Emitter-base cutoff current (Collector open) IEBO Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) Vi(on) Input voltage Vi(off) Input resistance R1 Resistance ratio R1/R2 R1 R2 Typ 1 10 k k Conditions IC = -10 μA, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = -0.
5 mA VCE = -0.
2 V, IC = -5 mA VCE = -5 V, IC = -100 μA Min -50 -50 Max -0.
1 -0.
5 -1.
5 Unit V V μA μA mA V V V k - 30 -0.
25 -1.
0 -30% 0.
08 1 0.
1 -0.
4 +30% 0.
12 Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page 1 of 3 Established : 2009-10-14 Revised : 2014-01-17 Free Datasheet h...


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