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IRF6609TRPBF

International Rectifier
Part Number IRF6609TRPBF
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 1, 2014
Detailed Description l l l l l l l l l RoHS Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU ...
Datasheet PDF File IRF6609TRPBF PDF File

IRF6609TRPBF
IRF6609TRPBF

Overview
l l l l l l l l l RoHS Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses and Switching Losses High Cdv/dt Immunity Low Profile (<0.
7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ IRF6609PbF IRF6609TRPbF Qg 46nC PD - 97091A VDSS 20V 2.
0mΩ@VGS = 10V 2.
6mΩ@VGS = 4.
5V RDS(on) max Applicable DirectFET Outline and Substrate Outline (see p.
8,9 for details) SQ SX ST MQ MX MT MT DirectFET™ ISOMETRIC Description The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6609PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.
The IRF6609PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity.
The IRF6609PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings Parameter V DS V GS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM P D @TC = 25°C P D @TA = 25°C P D @TA = 70°C TJ TSTG Drain-to-Source ...


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