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IRF6709S2TR1PBF

International Rectifier
Part Number IRF6709S2TR1PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 1, 2014
Detailed Description PD - 97328A IRF6709S2TRPbF IRF6709S2TR1PbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooli...
Datasheet PDF File IRF6709S2TR1PBF PDF File

IRF6709S2TR1PBF
IRF6709S2TR1PBF

Overview
PD - 97328A IRF6709S2TRPbF IRF6709S2TR1PbF l RoHS Compliant and Halogen Free l Low Profile (<0.
7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application  l Compatible with existing Surface Mount Techniques l 100% Rg tested  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified)   VDSS Qg  tot VGS Qgd 2.
8nC RDS(on) Qgs2 1.
1nC RDS(on) Qoss 4.
6nC 25V max ±20V max 5.
9mΩ@10V 10.
1mΩ@4.
5V Qrr 9.
3nC Vgs(th) 1.
8V 8.
1nC Applicable DirectFET Outline and Substrate Outline  S1 S2 SB M2 M4 L4 S1 L6 DirectFET ™ ISOMETRIC L8 Description The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6709S2TRPbF has low charge along with ultra low package inductance providing significant reduction in switching losses.
The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.
The IRF6709S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters.
Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR 30 Typical RDS(on) (mΩ) Max.
25 ±20 12 9.
7 39 100 51 10 VGS , Gate-to-Source Voltage (V) Units V Drain-to-Source Voltage Gate-to-Source Volta...


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