DatasheetsPDF.com

IRF6810STR1PBF

Part Number	IRF6810STR1PBF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Apr 1, 2014
Detailed Description	PD -96393 IRF6810STRPbF IRF6810STR1PbF l l l l l l l l l l DirectFET plus Power MOSFET RoHS Compliant and Halogen Fr...
Datasheet	IRF6810STR1PBF PDF File

Overview

PD -96393 IRF6810STRPbF IRF6810STR1PbF l l l l l l l l l l DirectFET plus Power MOSFET RoHS Compliant and Halogen Free Typical values (unless otherwise specified) Low Profile (<0.
7 mm) Dual Sided Cooling Compatible VDSS VGS RDS(on) RDS(on) Ultra Low Package Inductance 25V max ±16V max 4.
0mΩ @ 10V 5.
6mΩ @ 4.
5V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Optimized for Control FET Application 7.
4nC 2.
7nC 0.
98nC 12nC 8.
9nC 1.
6V Compatible with existing Surface Mount Techniques 100% Rg tested Footprint compatible to DirectFET D G S D ® Applicable DirectFET Outline and Substrate Outline S1 S2 SB M2 M4 L4 S1 L6 DirectFET®plus ISOMETRIC L8 Description The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6810STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses.
The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.
The IRF6810STRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters.
Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR 15 Typical RDS(on) (mΩ) Max.
Units V Drain-to-Source Voltage Gate-to-Source Volta...

Similar Datasheet

IRF6810STR1PBF Power MOSFET - International Rectifier

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)