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FQPF6N80C

Fairchild Semiconductor
Part Number FQPF6N80C
Manufacturer Fairchild Semiconductor
Description 800V N-Channel MOSFET
Published Apr 4, 2014
Detailed Description FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET December 2013 FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, ...
Datasheet PDF File FQPF6N80C PDF File

FQPF6N80C
FQPF6N80C

Overview
FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET December 2013 FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.
5 A, 2.
5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
• 5.
5 A, 800 V, RDS(on) = 2.
5 Ω (Max.
) @ VGS = 10 V, ID = 2.
75 A • Low Gate Charge (Typ.
21 nC) • Low Crss (Typ.
8 pF) • 100% Avalanche Tested D GD S TO-220 G D S G TO-220F S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted.
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - ...


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