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10NK50Z

STMicroelectronics
Part Number 10NK50Z
Manufacturer STMicroelectronics
Description STF10NK50Z
Published Apr 4, 2014
Detailed Description N-CHANNEL 500V - 0.55Ω - 9A TO-220 / TO-220FP Zener-Protected SuperMESH™MOSFET Table 1: General Features TYPE STP10NK50Z...
Datasheet PDF File 10NK50Z PDF File

10NK50Z
10NK50Z

Overview
N-CHANNEL 500V - 0.
55Ω - 9A TO-220 / TO-220FP Zener-Protected SuperMESH™MOSFET Table 1: General Features TYPE STP10NK50Z STF10NK50Z ■ ■ ■ ■ ■ ■ STP10NK50Z STF10NK50Z Figure 1: Package ID 9A 9 A(*) Pw 125 W 30 W VDSS 500 V 500 V RDS(on) < 0.
7 Ω < 0.
7 Ω TYPICAL RDS(on) = 0.
55 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 2 TO-220 TO-220FP DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Figure 2: Internal Schematic Diagram APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ■ LIGHTING Table 2: Order Codes SALES TYPE STP10NK50Z STF10NK50Z MARKING P10NK50Z F10NK50Z PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE Rev.
2 September 2005 1/12 Free Datasheet http://www.
Datasheet4U.
com STP10NK50Z - STF10NK50Z Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter TO-220 Value TO-220FP Unit V V V 9 (*) 5.
7(*) 36(*) 30 0.
24 A A A W W/°C V V/ns 2500 V °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.
5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -9 5.
7 36 125 1 500 500 ±30 4000 4.
5 -55 to 150 ( ) Pulse width limited by safe operating area (1) ISD ≤ 9 A, di/dt ≤200A/µs, VDD ≤ 400 (*) Limited only by maximum temperatu...


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