DatasheetsPDF.com

ICL71C03

Intersil
Part Number ICL71C03
Manufacturer Intersil
Description A/D Converter
Published Apr 22, 2014
Detailed Description BTA312-800CT 4 October 2012 3Q Hi-Com Triac Product data sheet 1. Product profile 1.1 General description Planar pass...
Datasheet PDF File ICL71C03 PDF File

ICL71C03
ICL71C03


Overview
BTA312-800CT 4 October 2012 3Q Hi-Com Triac Product data sheet 1.
Product profile 1.
1 General description Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj = 150 °C) without the aid of a snubber.
It is used in applications where "high junction operating temperature capability" is required.
1.
2 Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High junction operating temperature capability • High voltage capability • Less sensitve gate for high noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only 1.
3 Applications • Applications subject to high temperature • Electronic thermostats (heating and cooling) • High power motor controls e.
g.
washing machines and vacuum cleaners • Rectifier-fed DC inductive loads e.
g.
DC motors and solenoids 1.
4 Quick reference data Table 1.
Symbol VDRM ITSM Tj IT(RMS) Quick reference data Parameter repetitive peak offstate voltage non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig.
4; Fig.
5 junction temperature RMS on-state current full sine wave; Tmb ≤ 125 °C; Fig.
1; Fig.
2; Fig.
3 Conditions Min Typ Max 800 100 150 12 Unit V A °C A Scan or click this QR code to view the latest information for this product Free Datasheet http://www.
Datasheet4U.
com NXP Semiconductors BTA312-800CT 3Q Hi-Com Triac Symbol IGT Parameter gate trigger current Conditions VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 Min 2 2 2 Typ - Max 35 35 35 Unit mA mA mA Static characteristics 2.
Pinning i...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)