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K4T51083QG

Part Number	K4T51083QG
Manufacturer	Samsung
Description	512Mb G-die DDR2 SDRAM
Published	Apr 22, 2014
Detailed Description	CSD18502KCS www.ti.com SLPS367A – AUGUST 2012 – REVISED OCTOBER 2012 40-V, N-Channel NexFET™ Power MOSFETs Check for Sa...
Datasheet	K4T51083QG PDF File

Overview

CSD18502KCS www.
ti.
com SLPS367A – AUGUST 2012 – REVISED OCTOBER 2012 40-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18502KCS 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 52 8.
4 VGS = 4.
5V VGS = 10V 1.
8 3.
3 2.
4 UNIT V nC nC mΩ mΩ V • • • • • • • • 2 ORDERING INFORMATION Device CSD18502KCS Package TO-220 Plastic Package Media Tube Qty 50 Ship Tube APPLICATIONS • • • DC-DC Con...

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