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2SC4430

Part Number	2SC4430
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Apr 22, 2014
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4430 DESCRIPTION ·NPN triple diffused planar silicon transi...
Datasheet	2SC4430 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4430 DESCRIPTION ·NPN triple diffused planar silicon transistor ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 12 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 65 W 150 ℃ Tstg Storage Temperature ...

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