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NP8P128AE3T1760E

Micron
Part Number NP8P128AE3T1760E
Manufacturer Micron
Description P8P Parallel Phase Change Memory
Published Apr 22, 2014
Detailed Description 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory (PCM) Features • High-performance READ – 115ns initi...
Datasheet PDF File NP8P128AE3T1760E PDF File

NP8P128AE3T1760E
NP8P128AE3T1760E

Overview
128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory (PCM) Features • High-performance READ – 115ns initial READ access – 135ns initial READ access – 25ns, 8-word asynchronous-page READ • Architecture – Asymmetrically blocked architecture – Four 32KB parameter blocks with top or bottom configuration – 128KB main blocks – Serial peripheral interface (SPI) to enable lower pin count on-board programming • Phase change memory (PCM) – Chalcogenide phase change storage element – Bit-alterable WRITE operation • Voltage and power – VCC (core) voltage: 2.
7–3.
6V – VCCQ (I/O) voltage: 1.
7–3.
6V – Standby current: 80µA (TYP) • Quality and reliability – More than 1,000,000 WRITE cycles – 90...


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