DatasheetsPDF.com

SI2318CDS

Vishay
Part Number SI2318CDS
Manufacturer Vishay
Description N-Channel 40 V (D-S) MOSFET
Published Apr 22, 2014
Detailed Description New Product Si2318CDS Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.042 at VG...
Datasheet PDF File SI2318CDS PDF File

SI2318CDS
SI2318CDS


Overview
New Product Si2318CDS Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.
042 at VGS = 10 V 0.
051 at VGS = 4.
5 V ID (A)a 5.
6 5.
1 Qg (Typ.
) 2.
9 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch • Portable and Consumer Applications D (3) SOT-23 G 1 3 D Marking Code P9 XXX Lot Traceability and Date Code Part # Code G (1) (2) S N-Channel MOSFET S 2 Top View Ordering Information: Si2318CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C IDM IS Symbol VDS VGS Limit 40 ± 20 5.
6a 4.
5 4.
3b, c 3.
5b, c 20 1.
75 1.
04b, c 2.
1 1.
3 1.
25b, c 0.
8b, c - 55 to 150 260 A Unit V Continuous Drain Current (TJ = 150 °C) ID Maximum Power Dissipation PD W TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t5s Steady State Symbol RthJA RthJF Typical 80 40 Maximum 100 60 Unit °C/W Notes: a.
Based on TC = 25 °C b.
Surface mounted on 1" x 1" FR4 board.
c.
t = 5 s.
d.
Maximum under steady state conditions is 125 °C/W.
Document Number: 67030 S10-2250-Rev.
A, 04-Oct-10 www.
vishay.
com 1 Free Datasheet http://www.
Datasheet4U.
com New Product Si2318CDS Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Tran...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)