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K3216-01

Fuji Electric
Part Number K3216-01
Manufacturer Fuji Electric
Description 2SK3216-01
Published Apr 22, 2014
Detailed Description 2SK3216-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low dri...
Datasheet PDF File K3216-01 PDF File

K3216-01
K3216-01

Overview
2SK3216-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3.
Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current ID Pulsed drain current ID(puls] Gate-source voltage VGS Maximum Avalanche Energy EAV *1 Max.
power dissipation Ta=25°C PD Tc=25°C PD Operating and storage Tch temperature range Tstg Rating 100 ±50 ±200 ±30 464 1.
67 135 +150 -55 to +150 Unit V A A V mJ W W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=298µH, Vcc=24V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forwa...


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