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IRFI4410ZGPBF

International Rectifier
Part Number IRFI4410ZGPBF
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 22, 2014
Detailed Description PD - 96372 IRFI4410ZGPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninte...
Datasheet PDF File IRFI4410ZGPBF PDF File

IRFI4410ZGPBF
IRFI4410ZGPBF

Overview
PD - 96372 IRFI4410ZGPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free VDSS RDS(on) typ.
max.
ID D 100V 7.
9m: 9.
3m: 43A D G G D S S TO-220AB Full-Pak D S G Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS (Thermally limited) TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw Max.
43 30 170 47 0.
3 ±30 310 -55 to + 175 300 10lb in (1.
1N m) Typ.
––– ––– Max.
3.
2 65 Units A c W W/°C V mJ °C d x x Thermal Resistance RθJC RθJA Junction-to-Case Junction-to-Ambient f Parameter f Units °C/W www.
irf.
com 1 05/18/11 Free Datasheet http://www.
Datasheet4U.
com IRFI4410ZGPbF Static @ T J = 25°C (unless otherwise specified) Symbol V(BR)DSS V(BR)DSS/ T J RDS(on) VGS(th) IDSS IG SS RG(int) Param eter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Min.
Typ.
Max.
Units 100 ––– ––– 2.
0 ––– ––– ––– ––– ––– ––– 95 7.
9 ––– ––– ––– ––– ––– 0.
9 Conditions ––– V V GS = 0V, ID = 250 μA ––– mV/°C Reference to 25°C, ID = 5mA 9.
3 m V GS = 10V, ID = 26A 4.
0 V V DS = VGS, ID = 150μ A 20 μ A V DS = 100V, V GS = 0V V DS = 100V, V GS = 0V, TJ = 125°C 250 100 nA V GS = 20V -100 V GS = -20V...


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