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BFG25A

NXP
Part Number BFG25A
Manufacturer NXP
Description NPN 5 GHz wideband transistor
Published May 5, 2014
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor Product specification Supersedes data of Sept...
Datasheet PDF File BFG25A PDF File

BFG25A
BFG25A

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 29 http://www.
Datasheet4U.
com Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability.
APPLICATIONS • RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz.
DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter).
PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 Top view BFG25A/X handbook, 2 columns 4 3 2 MSB014 Marking code: V11.
Fig.
1 SOT143B.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 165 °C IC = 0.
5 mA; VCE = 1 V IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C IC = 0.
5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C IC = 0.
5 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C IC = 1 mA; VCE = 1 V; f = 1 GHz; Γ = Γopt; Tamb = 25 °C CONDITIONS − − − − 50 3.
5 − − − MIN.
− − − − 80 5 18 1.
8 2 TYP.
MAX.
8 5 6.
5 32 200 − − − − GHz dB dB dB UNIT V V mA mW 1997 Oct 29 2 http://www.
Datasheet4U.
com Philips Semiconductors Product specification NPN 5 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1.
Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1.
Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL ICBO hFE Cre fT GUM F PARAMETER collector leakage current DC current gain feedback capacitance tran...


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