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IRF6643TRPbF

IRF
Part Number IRF6643TRPbF
Manufacturer IRF
Description DIGITAL AUDIO MOSFET
Published May 5, 2014
Detailed Description DIGITAL AUDIO MOSFET Features • Latest MOSFET silicon technology • Key parameters optimized for Class-D audio amplifier ...
Datasheet PDF File IRF6643TRPbF PDF File

IRF6643TRPbF
IRF6643TRPbF

Overview
DIGITAL AUDIO MOSFET Features • Latest MOSFET silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 200 W per channel into 8Ω load in half-bridge configuration amplifier • Dual sided cooling compatible • Compatible with existing surface mount technologies • RoHS compliant, halogen-free • Lead-free (qualified up to 260°C reflow) IRF6643TRPbF Key Parameters VDS RDS(ON) typ.
@ VGS = 10V Qg typ.
RG(int) typ.
150 29 39 0.
9 V mΩ nC Ω MZ DirectFET® ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
6, 7 for details) SH SJ ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance per s...


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