DatasheetsPDF.com

IRF6785MTRPbF

IRF
Part Number IRF6785MTRPbF
Manufacturer IRF
Description DIGITAL AUDIO MOSFET
Published May 5, 2014
Detailed Description DIGITAL AUDIO MOSFET PD - 97282 IRF6785MTRPbF Key Parameters 200 VGS = 10V 85 26 3.0 V m: nC VDS • Latest MOSFET Sili...
Datasheet PDF File IRF6785MTRPbF PDF File

IRF6785MTRPbF
IRF6785MTRPbF

Overview
DIGITAL AUDIO MOSFET PD - 97282 IRF6785MTRPbF Key Parameters 200 VGS = 10V 85 26 3.
0 V m: nC VDS • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier RDS(on) typ.
@ applications Qg typ.
• Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency RG(int) max • Low Qrr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 250W per channel into 8Ω Load in Half-Bridge Configuration Amplifier • Dual sided cooling compatible · Compatible with existing surface mount technologies · RoHS compliant containing no lead or bromide MZ ·Lead-Free (Qualified up to 260°C Reflow) Applicable DirectFET Outline and Substrate Outline (see p.
6, 7 for details) SQ SX ST SH MQ MX MT MN Features DirectFET™ ISOMETRIC MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6785MPbF device utilizes DirectFETTM packaging technology.
DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging.
Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.
The DirectFETTM package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes.
The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combi...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)