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CEB6060N

Part Number	CEB6060N
Manufacturer	CET
Description	N-Channel Enhancement Mode Field Effect Transistor
Published	May 5, 2014
Detailed Description	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell d...
Datasheet	CEB6060N PDF File

Overview

N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS(ON) = 25mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
CEP6060N/CEB6060N D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 60 Units V V A A W W/ C C ±20 42 168 88 0.
59 -65 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Therma...

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