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20NK50Z

STMicroelectronics
Part Number 20NK50Z
Manufacturer STMicroelectronics
Description N-Channel MOSFET
Published May 5, 2014
Detailed Description STP20NK50Z - STW20NK50Z STB20NK50Z - STB20NK50Z-S N-CHANNEL 500V -0.23Ω- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected ...
Datasheet PDF File 20NK50Z PDF File

20NK50Z
20NK50Z

Overview
STP20NK50Z - STW20NK50Z STB20NK50Z - STB20NK50Z-S N-CHANNEL 500V -0.
23Ω- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH™ MOSFET TYPE STB20NK50Z STB20NK50Z-S STP20NK50Z STW20NK50Z s s s VDSS 500 500 500 500 V V V V RDS(on) < 0.
27 Ω < 0.
27 Ω < 0.
27 Ω < 0.
27 Ω ID 17 17 17 17 A A A A Pw 190 190 190 190 W W W W 1 3 2 1 2 3 s s TYPICAL RDS(on) = 0.
23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTEDGATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-247 3 12 3 1 I2SPAK D2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE STB20NK50ZT4 STB20NK50Z-S STP20NK50Z STW20NK50Z May 2004 MARKING B20NK50Z B20NK50Z P20NK50Z W20NK50Z PACKAGE D2PAK I2SPAK TO-220 TO-247 PACKAGING TAPE & REEL TUBE TUBE TUBE 1/13 http://www.
Datasheet4U.
com STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100 pF, R=1.
5 KΩ) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 500 500 ± 30 17 10.
71 68 190 1.
51 6000 4.
5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C ( ) Pulse width limited by safe operating area (1) ISD ≤17A, di/dt ≤ 2...


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