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IPS604-05D

IP Semiconductor
Part Number IPS604-05D
Manufacturer IP Semiconductor
Description High sensitive triggering levels
Published May 5, 2014
Detailed Description IP Semiconductor Co., Ltd. High sensitive triggering levels, the IPS6008 series SCRs is suitable for all applications, w...
Datasheet PDF File IPS604-05D PDF File

IPS604-05D
IPS604-05D

Overview
IP Semiconductor Co.
, Ltd.
High sensitive triggering levels, the IPS6008 series SCRs is suitable for all applications, where the available gate current is limited, such as capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies… IPS604-xxD MAIN FEATURES Symbol IT(AV) VDRM / VRRM IGT Value 4 600 ≤ 200 Unit A V uA ABSOLUTE MAXIMUM RATINGS Parameter Storage Junction Temperature Range Operating Junction Temperature Range Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Tj = 25℃ Tj = 25℃ Tc = 35℃ Tc = 35℃ Symbol Tstg Tj VDRM VRRM IT(RMS) IT(AV) Value -40 to +150 -40 to +110 600 600 4 2.
5 Unit ℃ V A A RMS on–state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on–state Current (Tj = 25℃) tp = 10ms tp = 8.
3ms I²t Value for fusing Peak gate current Average gate power dissipation ITSM 30 33 4.
5 1.
2 0.
2 A tp = 10ms tp = 20us, Tj = 110 ℃ Tj = 110 ℃ I²t IGM PG(AV) A²s A W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.
com 1 Free Datasheet http://www.
Datasheet4U.
com IPS604-xxD ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPS604-xxD Symbol Test Condition 03 05 20 50 0.
6 0.
8 0.
2 6 5 1.
4 1.
8 10 5 0.
1 5 0.
1 06 30 60 08 50 80 MIN MAX VD = 6V RL = 100Ω TYP MAX VD=VDRM, RL=3.
3KΩ, RGK = 1KΩ Tj = 110 ℃ IG = 1mA RGK = 1KΩ IT = 50mA RGK = 1KΩ IT = 8A t p = 380uS Tj = 25 ℃ VD = 67% VDRM RGK = 1KΩ Tj = 110 ℃ VD = VDRM RGK = 1KΩ Tj = 25 ℃ MIN MAX MAX TYP MAX MIN MAX MAX MAX MAX 10 30 Unit IGT uA VGT V VGD IL IH VTM dV/dt IDRM V mA mA V/us V/us uA mA uA mA VD = VDRM RGK = 1KΩ Tj = 110 ℃ VR = VRRM RGK = 1KΩ Tj = 25 ℃ IRRM VD = VRRM RGK = 1KΩ Tj = 110 ℃ THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case TO-252 Value 2.
8 Unit ℃/W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +...


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