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JANTXV2N7228

IRF
Part Number JANTXV2N7228
Manufacturer IRF
Description POWER MOSFET
Published May 5, 2014
Detailed Description PD - 90493F POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRFM450 IRFM450 JANTX2N7228 JANTXV2N7228 REF...
Datasheet PDF File JANTXV2N7228 PDF File

JANTXV2N7228
JANTXV2N7228


Overview
PD - 90493F POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRFM450 IRFM450 JANTX2N7228 JANTXV2N7228 REF: MIL-PRF-19500/592 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.
415 Ω ID 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink.
This improves thermal efficiency and reduces drain capacitance.
TO-254AA Features: n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 12 8.
0 48 150 1.
2 ±20 750 12 15 3.
5 -55 to 150 300 ( 0.
063 in.
(1.
6mm) from case for 10s) 9.
3 (Typical) Units A W W/°C V mJ A mJ V/ns o C g www.
irf.
com 1 02/05/02 Free Datasheet http://www.
Datasheet4U.
com IRFM450 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVD...



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