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TK5P50D

Toshiba
Part Number TK5P50D
Manufacturer Toshiba
Description N-Channel MOSFET
Published May 9, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK5P50D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-...
Datasheet PDF File TK5P50D PDF File

TK5P50D
TK5P50D

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK5P50D 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance : RDS(ON) = 1.
3 Ω (typ.
) (2) High forward transfer admittance : |Yfs| = 3.
0 S (typ.
) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 500 V) (4) Enhancement mode : Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK5P50D DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2009-12 1 2015-03-06 Rev.
1.
0 TK5P50D 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 5 A Drain current (pulsed) (Note 1) IDP 20 Power dissipation (Tc = 25 ) PD 80 W Single-pulse avalanche energy (Note 2) EAS 128 mJ Avalanche current (Note 3) IAR 5 A Repetitive avalanche energy (Note 3) EAR 8 mJ Reverse drain current (DC) (Note 1) IDR 5 A Reverse drain current (pulsed) (Note 1) IDRP 20 Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: VDD = 90 V, Tch = 25  (initial), L = 8.
67 mH, RG = 25 Ω, IAR = 5 ...


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