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RK7002A

Rohm
Part Number RK7002A
Manufacturer Rohm
Description Transistors
Published May 9, 2014
Detailed Description RK7002A Transistors Switching (60V, 300mA) RK7002A !Features 1) Low on-resistance. 2) High ESD 3) High-speed switching....
Datasheet PDF File RK7002A PDF File

RK7002A
RK7002A

Overview
RK7002A Transistors Switching (60V, 300mA) RK7002A !Features 1) Low on-resistance.
2) High ESD 3) High-speed switching.
4) Low-voltage drive (4V).
5) Easily designed drive circuits.
6) Easy to use in parallel.
!External dimensions (Units : mm) 0.
95 0.
95 0.
15 (3) (2) (1) 0.
4 1.
3 2.
4 0.
95 !Structure Silicon N-channel MOSFET transistor 0.
45 0~0.
1 0.
2Min.
Each lead has same dimensions 1.
9 2.
9 ROHM : SST3 EIAJ : SOT-23 Abbreviated symbol : RKS (1) Source (2) Gate (3) Drain !Equivalent circuit (3) (2) ∗Gate Protection Diode.
(1) ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use.
Use the protection circuit when fixed voltages are exceeded.
!Absolute max imum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Continuous Drain reverse current Pulsed Symbol VDSS VGSS ID IDP∗1 IDR IDRP∗1 PD∗2 Tch Tstg Limits 60 ±20 300 1.
2 300 1.
2 200 150 −55~+150 Unit V V mA A mA A mW °C °C Total power dissipation Channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When using 1×0.
75×0.
062 inch glass epoxy board.
http://www.
Datasheet4U.
com RK7002A Transistors !Electrical characteristics (Ta=25°C) Parameter Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Symbol IGSS V (BR) DSS IDSS VGS (th) Min.
− 60 − 1 − − 200 − − − − − − − − − − Typ.
− − − − 0.
7 1.
1 − 33 14 9 6 5 13 80 36 0.
6 0.
5 − − Max.
±10 − 1 2.
5 1.
0 1.
5 − − − − − − − − Unit µA V µA V Ω mS pF pF pF ns ns ns ns nC nC nC Test Conditions VGS=±20V, VDS=0V ID=10µA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=300mA, VGS=10V ID=300mA, VGS=4V VDS=10V, ID=300mA VDS=10V VGS=0V f=1MHz ID=150mA, VDD 30V VGS=10V RL=200Ω RGS=10Ω VDD 30V VGS=10V ID=200mA Drain-source on-state resistance RDS (on)∗1 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off de...


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