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LM6822

Mai Li Electronics
Part Number LM6822
Manufacturer Mai Li Electronics
Description NPN High Voltage Switching Transistor
Published May 11, 2014
Detailed Description LM6822 NPN/NPN High Voltage Switching Transistor ●：■■■■ROHS ●FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■W...
Datasheet PDF File LM6822 PDF File

LM6822
LM6822

Overview
LM6822 NPN/NPN High Voltage Switching Transistor ●：■■■■ROHS ●FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■ROHS COMPLIANT ●■■■ ●APPLICATION:■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER ECT.
●（TC=25℃） ●Absolute Maximum Ratings (Tc=25℃) PARAMETER SYMBOL - VCBO Collector-Base Voltage - VCEO Collector-Emitter Voltage - VEBO Emitter-Base Voltage Ic Collector Current PC Total Power Dissipation Tj Junction Temperature TsTg Storage Temperature VALUE 600 410 9 0.
8 12 150 -55-150 UNIT V V V A W ℃ C B E ℃ ：TO-92 BCE （TC=25℃） Electrical Characteristics(Tc=25℃) CHARACTERISTICS SYMBOL - ICBO Collector-Base Cutoff Current - ICEO Collector-Emitter Cutoff Current - VCEO Collector-Emitter Voltage - VEBO Collector-Base Voltage - Collector-Emitter Saturation Voltage - Base-Emitter Saturation Voltage TEST CONDITION VCB=600V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=100mA,IB=20mA MIN MAX 5 10 UNIT uA uA V V 410 9 0.
3 0.
5 0.
85 1.
2 8 15 6 1.
5 2.
5 30 Vcesat IC=500mA,IB=100mA IC=800mA,IB=200mA V V V Vbesat IC=500mA,IB=100mA VCE=5V,IC=200uA DC Current Gain Hfe VCE=5V,IC=200mA VCE=5V,IC=800mA Storage Time falling time ts tf VCC=5V IC=0.
25A (UI9600) us 0.
8 Tel: 0755-81457900 Fax: 0755-81457901 http://www.
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