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LUH100G1201Z

LSIS
Part Number LUH100G1201Z
Manufacturer LSIS
Description 1200V 100A 2-Pack IGBT Module
Published May 15, 2014
Detailed Description LUH100G1201 LUH100G1201Z*(1) Features • Soft Punch Through - Low Loss (SPT+) Technology SUSPM™ 1200V 100A 2-Pack IGBT M...
Datasheet PDF File LUH100G1201Z PDF File

LUH100G1201Z
LUH100G1201Z

Overview
LUH100G1201 LUH100G1201Z*(1) Features • Soft Punch Through - Low Loss (SPT+) Technology SUSPM™ 1200V 100A 2-Pack IGBT Module Preliminary data • • • - Highly rugged SPT+ design Free Wheeling Diodes with soft reverse recovery Industrial standard package with copper base plate Included ESD protection function *(1) Applications • • • Welder / Power Supply UPS / Inverter Industrial Motor Driver SUSPM1 94.
5 x 34.
5 x 31.
1 mm Absolute Maximum Ratings TC = 25°C unless otherwise noted Item Symbol VCES VGES IC IGBT ICM TSC Tj PD VRRM Diode IF IFRM Tj Tstg Viso Module Mt MS W @Tj = 150°C, Continuous tP = 1 ms Operating Junction Temperature Storage Temperature @ AC 1minute Main Terminal Mounting torque (M5) Heat sink Mounting torque (M6) Weight *(2) Conditions Value 1200 ± 20 Units V V A A A μs °C W W V A A °C °C V Nm Nm g @Tj = 150 °C, TC = 25 °C, Continuous @Tj = 150°C, TC = 80°C, Continuous @TC = 80 °C, tP = 1 ms Chip Level, @Tj = 125 °C, VGE = 15 V, VCC = 800 V, VCE < VCES Operating Junction Temperature *(2) @Tj = 150 °C, TC = 25 °C @Tj = 150 °C, TC = 80 °C 150 100 200 10 -40~125 600 300 1200 100 200 -40~125 -40~125 2500 2.
5~5 3.
0~5 180 Internal Circuit & Pin Description Pin Number 1 2 3 4 5 6 7 Pin Name C2E1 E2 C1 G1 E1 G2 E2 Pin Description Output Negative DC Link Output Positive DC Link Output Gate Input for High-side Emitter Input for High-side Gate Input for Low-side Emitter Input for Low-side (Note *1) Option : Included ± 28 V Zener Diode between Gate and Emitter.
(Note *2) The Maximum junction temperature of chip is 150 °C.
©2012 LSIS, Preliminary Data Rev 0.
3_06.
01.
2012 1 of 7 http://www.
Datasheet4U.
com LUH100G1201Z*(1) Electrical Characteristics of IGBT and Diode TC = 25°C unless otherwise noted Static Characteristics Symbol BVCES ICES IGES VGE(th) VCE(sat) Parameter C-E Breakdown Voltage C-E Cut-Off Current G-E Leakage Current G-E Threshold Voltage Collector to Emitter Saturation Voltage Test Conditions VGE = 0 V, IC = 1 mA VCE = VCES, VGE = 0 V VG...


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