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OD-669

OPTO DIODE
Part Number OD-669
Manufacturer OPTO DIODE
Description HIGH-POWER GaAlAs IRLED ILLUMINATOR
Published May 20, 2014
Detailed Description HIGH-POWER GaAlAs IRLED ILLUMINATOR FEATURES • • • • • Highest power output available 880nm peak emission Nine chips con...
Datasheet PDF File OD-669 PDF File

OD-669
OD-669

Overview
HIGH-POWER GaAlAs IRLED ILLUMINATOR FEATURES • • • • • Highest power output available 880nm peak emission Nine chips connected in series Very wide angle of emission Electrically isolated case OD-669 .
053 .
067 LED CHIPS .
140 R (REF.
ONLY) .
342 R .
325 .
142 .
152 EPOXY .
084 .
096 .
030 .
426 .
432 .
955 .
965 1.
225 1.
255 .
480 .
350 MIN CATHODE .
170 MAX DIMPLE .
680 .
700 ANODE All surfaces are gold plated.
Dimensions are nominal values in inches unless otherwise specified.
RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Peak Emission Wavelength, λP Spectral Bandwidth at 50%, ∆λ Half Intensity Beam Angle, θ Forward Voltage, VF Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 300mA IF = 5A IF = 50mA IF = 300mA IR = 10µA VR = 0V MIN 390 TYP 500 6500 880 120 30 11 3 3 80 MAX UNITS mW nm Deg nm Reverse Breakdown Voltage, VR 5 13.
5 15 Volts Volts µsec µsec pF ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Continuous Forward Current Reverse Voltage Power...


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