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AUIRGU4045D

IRF
Part Number AUIRGU4045D
Manufacturer IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Published May 20, 2014
Detailed Description AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • • Lo...
Datasheet PDF File AUIRGU4045D PDF File

AUIRGU4045D
AUIRGU4045D

Overview
AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • • Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA Square RBSOA 100% of the parts tested for ILM Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant Automotive Qualified* G AUIRGR4045D AUIRGU4045D C PD - 97637 VCES = 600V IC = 6.
0A, TC = 100°C VCE(on) typ.
= 1.
7V E n-channel C E Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI D-Pak AUIRGR4045D G I-Pak AUIRGU4045D G C E G Gate C Colletor E Emitter Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause...


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