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APT20SCD120S

MICROSEMI
Part Number APT20SCD120S
Manufacturer MICROSEMI
Description Zero Recovery Silicon Carbide Schottky Diode
Published May 21, 2014
Detailed Description APT20SCD120B APT20SCD120S 1200V 20A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS • Anti-Parallel D...
Datasheet PDF File APT20SCD120S PDF File

APT20SCD120S
APT20SCD120S

Overview
APT20SCD120B APT20SCD120S 1200V 20A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Power Factor Correction (PFC) • Low Forward Voltage • Low Leakage Current 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 PRODUCT FEATURES • Zero Recovery Times (trr) • Popular TO-247 Package or surface mount D3PAK package PRODUCT BENEFITS • Higher Reliability Systems • Minimizes or eliminates snubber TO -2 4 7 D 3 PAK 1 2 MAXIMUM RATINGS Symbol VR VRRM VRWM IF IFRM IFSM Ptot TJ, TSTG TL TC = 25°C unless otherwise specified.
Ratings Unit Characteristic / Test Conditions Maximum D.
C.
Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum D.
C.
Forward current TC = 25°C TC = 135°C 1200 Volts 68 20 100 220 208 66 -55 to 150 °C 300 W Amps Repetitive Peak Forward Suge Current (TJ = 45°C, tp = 10ms, Half Sine Wave) Non-Repetitive Forward Surge Current (TJ = 25°C, tp = 10ms, Half Sine) Power Dissipation Operating and Storage Junction Temperature Range Lead Temperature for 10 Seconds TC = 25°C TC = 110°C STATIC ELECTRICAL CHARACTERISTICS Symbol VF Characteristic / Test Conditions Forward Voltage IF = 20A TJ = 25°C IF = 20A, TJ = 150°C Maximum Reverse Leakage Current VR = 1200V TJ = 25°C VR = 1200V, TJ = 150°C Total Capactive Charge VR = 800V, IF = 20A, di/dt = -100A/μs, TJ = 25°C Junction Capacitance VR = 0V, TJ = 25°C, f = 1MHz Min Typ 1.
5 2.
2 Max 1.
8 Unit Volts 400 μA 2000 050-7702 Rev A 10 - 2012 http://www.
Datasheet4U.
com IRM Qc 66 1135 160 100 nC CT Junction Capacitance VR = 200V, TJ = 25°C, f = 1MHz Junction Capacitance VR = 400V, TJ = 25°C, f = 1MHz pF Microsemi Website - http://www.
microsemi.
com THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT APT20SCD120B_S Min Typ Max 0.
6 °C/W 0.
22 oz g lb·in N·m Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight Unit 5.
9 10 Maximum Mounting Torque 1.
1 Torqu...


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