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D1409

SavantIC
Part Number D1409
Manufacturer SavantIC
Description 2SD1409
Published May 22, 2014
Detailed Description SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 www.datasheet4u.com DESCRIPTION ...
Datasheet PDF File D1409 PDF File

D1409
D1409

Overview
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 www.
datasheet4u.
com DESCRIPTION ·With TO-220Fa package ·High DC current gain ·DARLINGTON APPLICATIONS ·Igniter applications ·High volitage switching applications PINNING PIN DE 1 2 3 Base Collector Emitter SCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL P VCBO VCEO VEBO IC IB ARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.
0 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 600 400 5 6 1 25 W UNIT V V V A A 1 http://www.
Datasheet4U.
com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 CHARACTERISTICS www.
datasheet4u.
com Tj=25 u nless otherwise specified ARAMETER Collector-emitter breakdown voltage ollector-emitter saturation voltage ase-emitter saturation voltage Emitter-collector diode forward voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IC=10mA; IB=0 400 IC=4A ;IB=0.
04A IC=4A ;IB=0.
04A IE=4A; IB=0 VCB=600V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V 600 IC=4A ; VCE=2V 100 f=1MHz ; VCB=50V;IE=0 35 pF 2.
0 2.
5 3.
0 0.
5 3 MIN TYP.
MAX UNIT V V V V mA mA SYMBOL P V(BR)CEO VCEsat C VBEsat B VECF ICBO IEBO hFE-1 hFE-2 COB Switching times ton T tstg tf urn-on time Storage time Fall time IB1=-IB2=0.
04A VCC=100V ,RL=25@ 1 8 5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.
datasheet4u.
com 2SD1409 Fig.
2 outline dimensions (unindicated tolerance:±0.
15 mm) 3 ...


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