DatasheetsPDF.com

H27UBG8T2A

Hynix
Part Number H27UBG8T2A
Manufacturer Hynix
Description 32Gb NAND Flash
Published May 23, 2014
Detailed Description Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash 32Gb NAND Flash H27UBG8T2A Rev 0.6 / Dec. 2009 1 http:/...
Datasheet PDF File H27UBG8T2A PDF File

H27UBG8T2A
H27UBG8T2A


Overview
Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash 32Gb NAND Flash H27UBG8T2A Rev 0.
6 / Dec.
2009 1 http://www.
Datasheet4U.
com Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash Document Title 32Gbit (4096 M x 8 bit) NAND Flash Memory Revision History Revision No.
0.
0 0.
1 0.
2 Initial Draft.
Update PKG outline.
Add Marking Information .
Update PKG Information.
Update Multi Plane Cache Program.
Correct Multi Plane Cache Program Operation Timings (Figure 22) 0.
3 Correct Random Data Input Timings (Figure 24) Update PKG Mechanical Data (Figure 2-1) Correct Restriction read status in multi plane operation (Figure 63) 0.
4 0.
5 Correct7.
5 Restriction of Read Status Value in Multi Plane Operation Correct7.
6.
Page Program Failure Correct4.
3 Multi Plane Page Read Change 52-VLGA Contact, X8 Device (Figure 2) Update PKG Mechanical Data (Figure 2-1) Update Pin Description of CE# 0.
6 Change Endurance Change AC Timing Characteristics (tRC, tRP, tWC, tWP, tCLS, tCS, tALS, tDS, tREA, tADL) Update Read ID table (3rd Byte) Change Bad Block Management Dec.
14.
2009 Preliminary Sep.
21.
2009 Oct.
5.
2009 Preliminary Preliminary Aug.
31.
2009 Preliminary History Draft Date May.
22.
2009 Jun.
17.
2009 Jul.
16.
2009 Remark Preliminary Preliminary Preliminary Rev 0.
6 / Dec.
2009 2 Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash Product Feature ■ Multilevel Cell technology ■ Endurance - 3,000 P/E cycles (with 24 bit/ 1,024byte ECC) ■ Supply Voltage - 3.
3V device : Vcc = 2.
7 V ~ 3.
6 V Vcc = 2.
7 V ~ 3.
6 V ■ Data Retention - 10 Years ■ Organization - Page size : 8,640 Bytes(8192+448 bytes) - Block size : 256 pages(2M+112K bytes) - Plane size : 1,024 blocks ■ Package - TSOP (12x20) - LGA (14x18) ■ Page Read Time - Random Access: 200 ㎲ (Max.
) - Sequential Access : 25 ㎱ (Min.
) ■ Unique ID for copyright protection ■ Write Time - Page program : 1600 ㎲ (Typ.
) - Block erase : 2.
5 ㎳ (Typ.
) ■ Operating Current - Read - Program - Erase - Sta...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)