DatasheetsPDF.com

MTP1406L3

CYStech Electronics
Part Number MTP1406L3
Manufacturer CYStech Electronics
Description P-Channel Enhancement Mode Power MOSFET
Published May 25, 2014
Detailed Description CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C733L3 Issued Date : 2012.02.14 Revised D...
Datasheet PDF File MTP1406L3 PDF File

MTP1406L3
MTP1406L3



Overview
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET Spec.
No.
: C733L3 Issued Date : 2012.
02.
14 Revised Date : 2012.
03.
09 Page No.
: 1/8 MTP1406L3 Features • Simple Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.
5A RDSON@VGS=-4.
5V, ID=-2A -60V -4.
8A 75mΩ (typ.
) 74mΩ (typ.
) 99mΩ (typ.
) Symbol MTP1406L3 Outline SOT-223 D S G:Gate D:Drain S:Source D G Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Linear Derating Factor Operating Junction and Storage Temperature Note : *1.
Pulse width limited by maximum junction temperature VDS VGS ID ID IDM Pd Tj, Tstg -60 ±20 -4.
8 *1 -3.
8 *1 -20 *1 2.
7 *2 0.
02 -55~+150 V V A A A W W/°C °C *2.
Surface mounted on 1 in² copper pad of FR-4 board; 120°C/W when mounted on minimum copper pad MTP1406L3 CYStek Product Specification http://www.
Datasheet4U.
com CYStech Electronics Corp.
Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Spec.
No.
: C733L3 Issued Date : 2012.
02.
14 Revised Date : 2012.
03.
09 Page No.
: 2/8 Value 14 45 (Note) Unit °C/W °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board; 120°C/W when mounted on minimum copper pad Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ΔBVDSS/ΔTj VGS(th) GFS IGSS IDSS IDSS *RDS(ON) Min.
-60 -1.
0 Typ.
-0.
04 -1.
9 5 75 74 99 14 3.
2 5.
2 10 7 43 25 939 54 39 29 20 Max.
-2.
5 ±100 -1 -25 90 90 120 -1.
2 Unit V V/°C V S nA μA μA mΩ Test Conditions VGS=0, ID=-250μA Reference to 25°C, ID=-1mA VDS = VGS, ID=-250μA VDS =-10V, ID=-3A VGS=±20 VDS =-48V, VGS =0 VDS =-48V, VGS =0, Tj=70°C VGS =-10V, ID=-4A VGS =-10V, ID=-2A VGS =-4.
5V, ID=-2A ID=-4.
8A, VDS=-30V, VGS=-10V VD...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)