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MTP2301V3

CYStech Electronics
Part Number MTP2301V3
Manufacturer CYStech Electronics
Description -20V P-CHANNEL Enhancement Mode MOSFET
Published May 25, 2014
Detailed Description CYStech Electronics Corp. -20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C322V3 Issued Date : 2012.07.18 Revised Da...
Datasheet PDF File MTP2301V3 PDF File

MTP2301V3
MTP2301V3

Overview
CYStech Electronics Corp.
-20V P-CHANNEL Enhancement Mode MOSFET Spec.
No.
: C322V3 Issued Date : 2012.
07.
18 Revised Date : Page No.
: 1/9 MTP2301V3 Features • Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile TSOT-23 package • Pb-free lead plating and halogen-free package BVDSS ID RDSON(MAX)@VGS=-4.
5V, ID=-2.
8A RDSON(MAX)@VGS=-2.
5V, ID=-2A -20V -3.
4A 79mΩ(typ.
) 116mΩ(typ.
) Equivalent Circuit MTP2301V3 Outline TSOT-23 D G G：Gate S：Source D：Drain S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25°C, VGS=-4.
5V Continuous Drain Current @TA=70°C, VGS=-4.
5V Pulsed Drain Current Ta=25℃ Maximum Power Dissipation Ta=70℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj ; Tstg Limits -20 ±8 -3.
4 -2.
7 -10 1.
38 (Note) 0.
88 (Note) -55~+150 Unit V V A W °C MTP2301V3 CYStek Product ...


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