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MTP2311N3

CYStech Electronics
Part Number MTP2311N3
Manufacturer CYStech Electronics
Description -60V P-CHANNEL Enhancement Mode MOSFET
Published May 25, 2014
Detailed Description CYStech Electronics Corp. -60V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C733N3 Issued Date : 2011.12.27 Revised Da...
Datasheet PDF File MTP2311N3 PDF File

MTP2311N3
MTP2311N3

Overview
CYStech Electronics Corp.
-60V P-CHANNEL Enhancement Mode MOSFET Spec.
No.
: C733N3 Issued Date : 2011.
12.
27 Revised Date : Page No.
: 1/8 MTP2311N3 Features • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.
5V,ID=-1.
7A -60V -3.
5A 72mΩ(typ) 98mΩ(typ) Symbol MTP2311N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=100°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation Linear Derating Factor (Note 3) Symbol VDS VGS ID IDM PD Tj ; Tstg Limits -60 ±20 -3.
5 -2.
2 -14 1.
38 0.
01 -55~+150 Unit V V A A A W W/°C °C Operating Junction and Storage Temperature Range Note : 1.
Pulse width limited by maximum junction temperature.
2.
Puls...


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