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MTP3J36Y3

Part Number	MTP3J36Y3
Manufacturer	CYStech Electronics
Description	-20V P-CHANNEL Enhancement Mode MOSFET
Published	May 25, 2014
Detailed Description	CYStech Electronics Corp. Spec. No. : C698Y3 Issued Date : 2012.07.13 Revised Date : Page No. : 1/ 8 -20V P-CHANNEL En...
Datasheet	MTP3J36Y3 PDF File

Overview

CYStech Electronics Corp.
Spec.
No.
: C698Y3 Issued Date : 2012.
07.
13 Revised Date : Page No.
: 1/ 8 -20V P-CHANNEL Enhancement Mode MOSFET BVDSS ID RDSON@VGS=-4.
5V, ID=-350mA RDSON@VGS=-4V, ID=-300mA RDSON@VGS=-2.
5V, ID=-300mA RDSON@VGS=-1.
8V, ID=-150mA MTP3J36Y3 Features -20V -350mA 0.
64Ω(typ) 0.
68Ω(typ) 1.
1Ω(typ) 1.
7Ω(typ) • Very low level gate drive requirements allowing direct operation in 3V circuits.
VGS(th)<1.
2V.
• Compact industrial standard SOT-523 surface mount package.
• Pb-free package.
Equivalent Circuit MTP3J36Y3 Outline SOT-723 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Tj=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-4.
5V Continuous Drain Current @ TA=85°C, VGS=-4.
5V Pulsed Drain Current (Note 1) Maximum Power Dissipation @ TA=25℃ Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Note : 1.
Pulse width≤ 10μs, duty cycle≤2%.
Symbol VDS VGS ID ID IDM PD Rth,ja Tj, Tstg Limits -20 ±10 -0.
35 -0.
25 -1.
4 150 833 -55~+150 Unit V A mW °C/W °C MTP3J36Y3 CYStek Product Specification http://www.
Datasheet4U.
com CYStech Electronics Corp.
Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS Min.
-20 -0.
5 Typ.
-0.
8 0.
4 0.
64 0.
68 1.
1 1.
7 59 21 15 5 6 42 14 1.
5 0.
28 0.
44 -0.
88 Max.
-1.
2 ±10 -1 -10 0.
9 0.
9 1.
4 2.
7 -0.
35 -1.
4 -1.
2 Unit V V S μA Spec.
No.
: C698Y3 Issued Date : 2012.
07.
13 Revised Date : Page No.
: 2/ 8 Test Conditions VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VDS=-3V, ID=-100mA VGS=±10V, VDS=0 VDS=-20V, VGS=0 VDS=-20V, VGS=0, Tj=55°C VGS=-4.
5V, ID=-350mA VGS=-4V, ID=-300mA VGS=-2.
5V, ID=-300mA VGS=-1.
8V, ID=-150mA *RDS(ON) Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *IS *ISM *VSD Ω pF VDS=-10V, VGS=0, f=1MHz VDS=-10V, ID=-200mA, VGS=-4.
5V, RG=10Ω ns nC VDS=-10V, ID=-250mA, VGS=-4.
5V A V VGS=0V, IS=-150mA *Pulse Test : Pul...

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MTP3J36Y3 -20V P-CHANNEL Enhancement Mode MOSFET - CYStech Electronics

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