DatasheetsPDF.com

MTP3LP01N3

CYStech Electronics
Part Number MTP3LP01N3
Manufacturer CYStech Electronics
Description 30V P-CHANNEL Enhancement Mode MOSFET
Published May 25, 2014
Detailed Description CYStech Electronics Corp. 30V P-CHANNEL Enhancement Mode MOSFET Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date...
Datasheet PDF File MTP3LP01N3 PDF File

MTP3LP01N3
MTP3LP01N3

Overview
CYStech Electronics Corp.
30V P-CHANNEL Enhancement Mode MOSFET Spec.
No.
: 794N3 Issued Date : 2010.
06.
17 Revised Date : 2014.
01.
17 Page No.
: 1/ 9 MTP3LP01N3 Features • Ultra high speed switching.
• Low gate charge.
• 2.
5V drive.
• Pb-free lead plating and halogen-free package.
BVDSS ID RDSON(typ) -30V -230mA 3Ω@-4V 4.
6Ω@-2.
5V 10.
9Ω@-1.
5V Equivalent Circuit MTP3LP01N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Ordering Information Device MTP3LP01N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTP3LP01N3 CYStek Product Specification http://www.
Datasheet4U.
com CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Maximum Power Dissipation (Note 2) Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Note : 1.
Pulse width≤ 10μs, duty cycle≤1%.
2.
When mounted on a glass epoxy with a dimension of 100mm²×1mm.
Spec.
No.
: 794N3 Issued Date : 2010.
06.
17 Revised Date : 2014.
01.
17 Page No.
: 2/ 9 Symbol VDS VGS ID IDM PD Rth,ja Tj, Tstg Limits -30 ±10 -230 -920 250 500 -55~+150 Unit V V mA mA mW °C/W °C Electrical Characteristics (Ta=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *IS *ISM *VSD Min.
-30 -0.
6 100 Typ.
0.
9 210 3 4.
6 10.
9 35.
7 11.
9 3.
7 26.
4 12.
8 31.
5 46.
4 0.
78 0.
1 0.
1 0.
83 Max.
-1.
1 ±1 -1 -10 5 8 18 -230 -920 -1.
2 Unit V V mS μA μA Ω Test Conditions VGS=0V, ID=-250μA VDS=-10V, ID=-100μA VDS=-10V, ID=-100mA VGS=±8V, VDS=0 VDS=-30V, VGS=0 VDS=-24V, VGS=0; Tj=125°C VGS=-4V, ID=-100mA VGS=-2.
5V, ID...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)