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MTP425I3

CYStech Electronics
Part Number MTP425I3
Manufacturer CYStech Electronics
Description P-Channel Enhancement Mode Power MOSFET
Published May 25, 2014
Detailed Description CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C391I3 Issued Date : 2012.11.27 Revised D...
Datasheet PDF File MTP425I3 PDF File

MTP425I3
MTP425I3

Overview
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET Spec.
No.
: C391I3 Issued Date : 2012.
11.
27 Revised Date : Page No.
: 1/8 MTP425I3 Features • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package BVDSS ID RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-5V, ID=-7A -30V -50A 10mΩ(typ) 14mΩ(typ) Symbol MTP425I3 Outline TO-251AB TO-251S G：Gate D：Drain S：Source G D S G D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=-10V, TC=25°C Continuous Drain Current @VGS=-10V, TC=100°C Continuous Drain Current @VGS=-10V, TA=25°C Continuous Drain Current @VGS=-10V, TA=100°C Pulsed Drain Current TC=25℃ TC=100℃ Power Dissipation TA=25℃ TA=100℃ Single Pulse Avalanche Energy Single Pulse Avalanche Current Operating Junction and Storage Temperature MTP425I3 VDS VGS ID IDM PD EAS IAS Tj, Tstg -30 ±25 -50 -32 -11 -7 -100 *1 50 *4 20 *4 2.
5 1.
0 3...


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