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26N50

UNISONIC TECHNOLOGIES
Part Number 26N50
Manufacturer UNISONIC TECHNOLOGIES
Description 26A 500V N-CHANNEL POWER MOSFET
Published May 25, 2014
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 26N50 Preliminary Power MOSFET 26A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The U TC ...
Datasheet PDF File 26N50 PDF File

26N50
26N50


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 26N50 Preliminary Power MOSFET 26A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The U TC 26N50 is an N-ch annel mod e p ower MOSF ET using UTC’s advanced technology to provide customers with planar stripe and DMOS technol ogy.
T his techn ology a llows a minim um on-state resistance and superior switching performance.
It also can withstand high energy pulse in the avalanche and commutation mode.
The U TC 26N50 is g enerally a pplied in h igh effici ency switch mode po wer suppl ies, active po wer factor correction a nd electroni c lamp ballasts based on half bridge topology.
„ FEATURES * RDS(ON)=0.
24Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested „ SYMBOL 2.
Drain 1.
Gate 3.
Source „ ORDERING INFORMATION Package TO-3P 1 G Pin Assignment 2 3 D S Packing Tube Ordering Number Lead Free Halogen Free 26N50L-T3P-T 26N50G-T3P-T Note: Pin Assignment: G: Gate D: Drain S: Source www.
unisonic.
com.
tw Copyright © 2012 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R502-789.
a http://www.
Datasheet4U.
com 26N50 „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V e 2) A Continuous (TC=25°C) I D 24(Not Drain Current Pulsed (Note 3) IDM 96 (Note 2) A Avalanche Current (Note 3) IAR 26 A 100 mJ Single Pulsed (Note 4) EAS 1 Avalanche Energy Repetitive (Note 5) EAR 29 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 15 V/ns Power Dissipation 290 W PD Derate above 25°C 2.
33 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~ +150 °C Note: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Drain current limited by maximum junction temperature 3.
Repetitive Rating: Pulse width limited by maximum junction temperature 4.
L =3.
4mH, IAS = 26A, VDD = 50V, RG = 25Ω,...


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