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2SC2625B

NELL SEMICONDUCTOR
Part Number 2SC2625B
Manufacturer NELL SEMICONDUCTOR
Description Silicon NPN Transistor
Published May 25, 2014
Detailed Description SEMICONDUCTOR RoHS 2SC2625B RoHS Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage...
Datasheet PDF File 2SC2625B PDF File

2SC2625B
2SC2625B

Overview
SEMICONDUCTOR RoHS 2SC2625B RoHS Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 10A/400V/80W 5 .
0 ±0 .
2 5 62 J C2 30 2S 12 2.
0 19.
9±0.
3 4.
0 TO-3P(B) 20.
0 min FEATURES High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw 4.
0 max 2 3 +0.
2 1.
05 -0.
1 5.
45±0.
1 C E +0.
2 0.
65 -0.
1 5.
45±0.
1 B 1.
8 15.
6±0.
4 9.
6 4.
8±0.
2 2.
0±0.
1 Φ 3.
2 ± 0,1 1.
4 C APPLICATIONS Switching regulator and general purpose Ultrasonic generators High frequency inverters 1 2 3 B E NPN All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (TC = 25°C) SYMBOL VCBO V CEO Collector to emitter voltage V CEO(SUS) V EBO IC IB PC Tj T stg Emitter to base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature T C = 25 °C 400 7 10 A 3 80 150 ºC -55 to 150 W PARAMETER Collector to base voltage VALUE 450 400 V UNIT THERMAL CHARACTERISTICS (TC = 25°C) SYMBOL Rth(j-c) PARAMETER Thermal resistance, junction to case VALUE 1.
55 UNIT ºC/W http://www.
Datasheet4U.
com www.
nellsemi.
com Page 1 of 3 SEMICONDUCTOR RoHS 2SC2625B RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (TC = 25°C) SYMBOL ICBO I EBO V CEO Collector to emitter voltage V CEO(SUS) * V CBO V EBO h FE V CE(sat) V BE(sat) t on t stg tf Collector to base voltage Emitter to base voltage Forward current transfer ratio (DC current gain) Collector to emitter saturation voltage Base to emitter saturation voltage Turn-on time Storage time Fall time l C = 1A, L = 50mH V l CBO = 1mA l EBO = 0.
1mA V CE = 5V, l C = 4A l C = 4A, l B = 0.
8A l C = 4A, l B = 0.
8A l C = 7.
5A, l B1 = 1.
5A, l B2 = -1.
5A R L = 20 Ω , P W = 20 µs, Duty ≤ 2 % 2.
0 1.
0 µS 450 7 10 1.
2 V 1.
5 1.
0 PARAMETER Collector cutoff current Emitter cutoff current CONDITIONS V CBO = 450V, l E = 0 V EBO = 7V, l C = 0 l CEO = 10mA ...


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