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MDP11N60

MagnaChip
Part Number MDP11N60
Manufacturer MagnaChip
Description N-Channel MOSFET
Published May 25, 2014
Detailed Description MDP11N60 N-channel MOSFET 600V MDP11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDP11N60 uses advanc...
Datasheet PDF File MDP11N60 PDF File

MDP11N60
MDP11N60

Overview
MDP11N60 N-channel MOSFET 600V MDP11N60 N-Channel MOSFET 600V, 11A, 0.
55Ω General Description The MDP11N60 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP11N60 is suitable device for SMPS, high Speed switching and general purpose applications.
Features  VDS = 600V  VDS = 660V  ID = 11A  RDS(ON) ≤ 0.
55Ω Applications @ VGS = 10V @ VGS = 10V  Power Supply  PFC  High Current, High Speed Switching GDS Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 600 660 ±30 11 6.
9 44 182 1.
45 4.
5 720 -55~150 Unit V V V A A A W W/ oC V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Symbol RθJA RθJC Rating 62.
5 0.
69 Unit oC/W Aug.
2021 Version 2.
2 1 Magnachip Semiconductor Ltd.
MDP11N60 N-channel MOSFET 600V Ordering Information Part Number MDP11N60TH Marking MDP11N60 Temp.
Range -55~150oC Package TO-220 Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Dr...


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