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SMK1625F

AUK
Part Number SMK1625F
Manufacturer AUK
Description Advanced Power MOSFET
Published May 25, 2014
Detailed Description Semiconductor SMK1625F Advanced Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features ...
Datasheet PDF File SMK1625F PDF File

SMK1625F
SMK1625F

Overview
Semiconductor SMK1625F Advanced Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features • • • • High Voltage: BVDSS=250V(Min.
) Low Crss : Crss=49pF(Typ.
) Low gate charge : Q g=22nC(Typ.
) Low RDS(on) :RDS(on)=0.
27Ω(Max.
) PIN Connection D Ordering Information Type NO.
SMK1625F SMK1625 Marking ww re .
nu at an e ce.
8 com Tr ia G Package Code TO-220F-3L GDS l S TO-220F-3L Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Rating 250 ±30 16 7.
2 64 35 Unit V V A A A W A mJ A mJ VDSS VGSS ID (TC=25℃) (TC=100℃) IDM PD PD F w C Drain current (Pulsed) Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * ② IAS 16 ② EAS 480 IAR 16 TJ ① ① EAR 13.
9 150 -55~150 Tstg °C * Limited by maximum junction temperature Characteristic Symbol Thermal resistance Junction-case R Junction-ambient th(J-C) Typ.
Rth(J-A) Max 3.
57 62.
5 Unit ℃/W KSD-T0O041-000 1 http://www.
Datasheet4U.
com SMK1625F Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance ④ ④ BVDSS VGS(th) IDSS V IGSS RDS(ON) V gfs V Ciss Coss Crss Test Condition ID=250μA, VGS=0 ID=250μA, VDS= VGS DS=250V, Min.
250 2.
0 - Typ.
Max.
4.
0 Unit V V μA nA Ω S pF VGS=0V -- - 1 ±100 VDS=0V, VGS=±30V GS=10V, DS=10V, ID=8.
0A ID=8.
0A - 0.
22 10.
5 0.
27 1275 278 64 28 - Reverse transfer capacitance Turn-on d elay t ime Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ww re .
nu at an e ce.
8 com Tr ia - 49 td(on) tr tf 15 td(off) Qg VDD=125V, ID=16A RG=25Ω 130 VGS=0V, VDS=25V, f=1MHz l...


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