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D9N40

Alpha & Omega Semiconductors
Part Number D9N40
Manufacturer Alpha & Omega Semiconductors
Description 8A N-Channel MOSFET
Published May 25, 2014
Detailed Description AOD9N40 400V,8A N-Channel MOSFET General Description The AOD9N40 is fabricated using an advanced high voltage MOSFET pr...
Datasheet PDF File D9N40 PDF File

D9N40
D9N40

Overview
AOD9N40 400V,8A N-Channel MOSFET General Description The AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC -DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) 500V@150℃ 8A <0.
8Ω RDS(ON) (at VGS=10V) TO252 DPAK Top View t e n G D r e .
n a D S G S ww Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentB TC=25°C 8 TC=100°C ID F w C ua Maximum 400 ±30 5 22 3.
2 150 300 5 125 1 -50 to 150 300 Typical 45 0.
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G S Bottom View 8 c T 100% UIS Tested! 100% Rg Tested! D om Units V V A A mJ mJ V/ns W W/ oC °C °C Maximum 55 0.
5 1 Units °C/W °C/W °C/W Page 1 of 6 http://www.
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com PD Pulsed Drain Current Avalanche Current C C IDM IAR Repetitive avalanche energy C EAR EAS dv/dt PD TJ, TSTG TL Single pulsed avalanche energy Peak diode recovery dv/dt TC=25°C B o Power Dissipation Derate above 25 C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Case-to-sink A Maximum Junction-to-Case D,F H A,G Symbol RθJA RθCS RθJC Rev0: Dec 2010 ria l AOD9N40 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward V...


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