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FJA13009

NELL SEMICONDUCTOR
Part Number FJA13009
Manufacturer NELL SEMICONDUCTOR
Description Silicon NPN Transistor
Published May 26, 2014
Detailed Description SEMICONDUCTOR FJA13009 Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 12A/400V/130W...
Datasheet PDF File FJA13009 PDF File

FJA13009
FJA13009

Overview
SEMICONDUCTOR FJA13009 Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 12A/400V/130W 5 .
0 ±0 .
2 RoHS RoHS Nell High Power Products 2.
0 19.
9±0.
3 4.
0 TO-3P(B) 20.
0 min FEATURES High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw 4.
0 max 2 3 +0.
2 1.
05 -0.
1 5.
45±0.
1 C E +0.
2 0.
65 -0.
1 5.
45±0.
1 B 1.
8 15.
6±0.
4 9.
6 4.
8±0.
2 2.
0±0.
1 Φ 3.
2 ± 0,1 1.
4 C APPLICATIONS Switching regulator and general purpose Ultrasonic generators High frequency inverters 1 2 3 B E NPN All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (TC = 25°C) SYMBOL VCBO V CEO V EBO IC I CP IB PC Tj T stg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Maximum peak collector current (pulse) Base current Collector power dissipation Junction temperature Storage temperature T C = 25 °C VALUE 700 400 7 12 24 6 130 150 ºC -55 to 150 W A V UNIT THERMAL CHARACTERISTICS (TC = 25°C) SYMBOL Rth(j-c) PARAMETER Thermal resistance, junction to case VALUE 1.
55 UNIT ºC/W http://www.
Datasheet4U.
com www.
nellsemi.
com Page 1 of 4 SEMICONDUCTOR FJA13009 RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (TC = 25°C) unless otherwise specified SYMBOL ICBO I EBO V CEO Collector to emitter voltage V CEO(SUS) * V CBO V EBO h FE Collector to base voltage Emitter to base voltage l C = 1A, L = 50mH V l CBO = 1mA l EBO = 1mA V CE = 5V, l C = 5A Forward current transfer ratio (DC current gain) V CE = 5V, l C = 8A V CE(sat) Collector to emitter saturation voltage l C = 5A, l B = 1A l C = 8A, l B = 1.
6A V BE(sat) t on t stg tf Base to emitter saturation voltage l C = 5A, l B = 1A l C = 8A, l B = 1.
6A Turn-on time Storage time Fall time V CC = 125V l C = 8A, l B1 = 1.
6A, l B2 = -1.
6A R L = 20Ω, P W = 20 µs, Duty ≤ 2 % 6 30 1.
0 1.
5 1.
2 1.
6 1.
1 3 0.
7 µS V 700 7 8 40 ...


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