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UF2N30Z

UNISONIC TECHNOLOGIES
Part Number UF2N30Z
Manufacturer UNISONIC TECHNOLOGIES
Description 2A 300V N-CHANNEL POWER MOSFET
Published May 27, 2014
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UF2N30Z 2A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION Power MOSFET The U TC UF2N30Z is ...
Datasheet PDF File UF2N30Z PDF File

UF2N30Z
UF2N30Z

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UF2N30Z 2A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION Power MOSFET The U TC UF2N30Z is an N -channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance.
1 SOT-223  FEATURES * R DS(ON) <2Ω @ V GS =10V, I D =2A * High switching speed * Typically 3.
2nC low gate charge * 100% avalanche tested  SYMBOL 2.
Drain 1.
Gate 3.
Source  ORDERING INFORMATION 1 G Pin Assignment 2 3 D S Packing Tape Reel Ordering Number Package Lead Free Halogen Free UF2N30ZL-AA3-R UF2N30ZG-AA3-R SOT-223 Note: Pin Assignment: G: Gate D: Drain S: Source UF2N30ZL-AA3-R (1)Packing Type (2)Package Type (3)Lead Free (1) R: Tape Reel (2) AA3: SOT-223 (3) L: Lead Free, G: Halogen Free www.
unisonic.
com.
tw Copyright © 2013 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R502-761.
B http://www.
Datasheet4U.
com UF2N30Z  Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT V DSS 300 V V GSS ±20 V Continuous ID 2 A Continuous Drain Current Pulsed I DM 8 A Avalanche Energy E AS 52 mJ Power Dissipation PD 2 W Junction Temperature TJ +150 °C Storage Temperature Range T STG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS MIN TYP MAX UNIT 300 1 10 -10 2 4 2 200 90 30 4 0.
64 1.
6 10 50 30 40 2 8 1.
3 V µA µA µA V Ω pF pF pF nC nC nC ns ns ns ns A A V PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =250µA, V GS =0V Drain-Source Leakage Current I DSS V DS =300V Forward V GS =+20V, V DS =0V Gate-Source Leakage Current I GSS Reverse V GS =-20V, V DS =0V ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) I D =250µA Static Drain-Source On-State Resistance R DS(ON) V GS =1...


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